Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery Thickness of the Ni layer

Thickness of the Ni layer is 400 nm

Surface Polishing:                 Two sides optical polished

Case Dimension: 25

No power source is available inside the glove box and the customer needs to extend the power cord to the outside of the glovebox

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery Thickness of the Ni layerSingle Crystal: Si Growth Method: FZ (Floating Zone) Type Dopant: N Phosphorus Orientation: (111) Resistivity: 15,000 25,000 ohm cm Diameter: 100 mm + 0. 5 mm Thickness: 0. 3 mm + 0. 025 mm Primary Flat: <110> Polish: One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater