Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1 Battery Consumables Operating Temp Range 1200°C <

Operating Temp Range 1200°C < 30 minutes

Polishing:                             One  side polished

and twins If your application is susceptible to the defects

Size:                            5" diameter x 0

Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1 Battery Consumables Operating Temp Range 1200°C <Single crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <110> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single