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Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001 Ceramic & Glass Substrate A-Z Resistivity: >7 x10^7 ohm
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Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001 Ceramic & Glass Substrate A-Z Resistivity: >7 x10^7 ohm
$54.05
Description
Resistivity: >7 x10^7 ohm
5) with advantages of higher energy density and lower cost
Type Speed Sensor for SYJ200
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Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001 Ceramic & Glass Substrate A-Z Resistivity: >7 x10^7 ohmSpecifications: Single crystal Si, (CZ) (Prime Grade) Conductivity: N type ( As doped) Resistivity: 0. 001~0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 525 mm Orientation: 4 degree off (111) + 0. 5 deg Polish: one side polished Surface roughness: < 5A, RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers
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