SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) Battery Cell Tester

SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) Battery Cell TesterSpecifications Device Layer Size: 5mmx5mm Type Dopant: N type P doped Orientation: <1 0 0>+ 0. 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0 um + 0. 1 um Handle Wafers: Type Dopant P type B doped Orientation <1 0 0>+ 0. 5 degree Resistivity: 10 20 ohm. cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner

Doping: undoped

0 % Specific Capacity

The syringe needle is not included in the standard package

Color:                                  Transparent/ transparent

Part # Standard items included on the package  Qty

Change in Voltage: Upto 5V

Thermal Expansion Coeff 12 ppm / °C

Please click the chemical formula below to link to the substrates available

Compaction Density: 3

Minimum Current change interval:

artificial graphite has been demonstrated to show higher energy density

Dielectric constant