N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as CopperAlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 500nm 10%, one side coated, undoped AlN film Front Surface: <1nm RMS, as grown Back surface: silicon N type AlN orientation: C plane (00. 1) Macro Defect Density: <1 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, , one side polished For Standard"> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as Copper"> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as CopperAlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 500nm 10%, one side coated, undoped AlN film Front Surface: <1nm RMS, as grown Back surface: silicon N type AlN orientation: C plane (00. 1) Macro Defect Density: <1 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, , one side polished For Standard"> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as Copper"> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as CopperAlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 500nm 10%, one side coated, undoped AlN film Front Surface: <1nm RMS, as grown Back surface: silicon N type AlN orientation: C plane (00. 1) Macro Defect Density: <1 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, , one side polished For Standard"> Undoped AlN Template on 2" Silicon (Si <111> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as Copper – digilifeset.online

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Undoped AlN Template on 2" Silicon (Si <111> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as Copper

$172.50

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N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as Copper">
Description

such as Copper

6" diameter

Carrier Concentration:      (5

Band Gap:  3

Undoped AlN Template on 2" Silicon (Si <111> N type) 2"x 500 nm - FmAlNonSiPc50D05C1FT500nmUS LiTaO3 such as CopperAlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 500nm 10%, one side coated, undoped AlN film Front Surface: <1nm RMS, as grown Back surface: silicon N type AlN orientation: C plane (00. 1) Macro Defect Density: <1 cm^2 Wafer base: Silicon [111] N type, 2" dia x0. 5 mm, , one side polished For Standard

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