GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP BaF2 please purchase separately

please purchase separately

Growing Method:             CZ

Tubing Replacements

Surface finish  (RMS or Ra) :  < 5A

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP BaF2 please purchase separatelyGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 10 mm x 10. 5 mm