Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm Cd

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm CdGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: >40 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal

Sealing spacers are made of nylon

you will find compounds which are superior as static seals in extreme temperature conditions

Atomic Number      13

please order our Portable 4 Probe Resistivity Testing Instrument

Heatable die

Type:            N-type

Vacuum 0~ -90 kPa

Warning: You must pay great attention to die change from one size to another

Application: Connect to anode current collector as polymer battery negative terminal

One end is 1/8 BSPP male fitting

Compatible with Argon gas environment

Width: 80 mm