LaAlO3, (100) Orn. 1" x 0.5mm wafer 1 SP - LAOa25D05C1 Au/Gold especially:

especially:

Do not raise the bottom cylinder (piston) more than it's maximum traveling distance

EPI polished  on one side or two sides to Ra < 10 Å

200&450 Mesh or Compact Ultrasonic Sieving System - MSK-SYU-3 to filter the powder (See Pic

LaAlO3, (100) Orn. 1" x 0.5mm wafer 1 SP - LAOa25D05C1 Au/Gold especially:LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +