Si wafer (111), 3 " dia x 0.5 mm, 1sp, N type, undoped, resistivity: > 1000ohm-cm - SIUc76D05C1R1000 Aluminum Film Construction Material

Construction Material

Voltage AC 220V 50/60Hz (for 110V

5 Ohms/cm  (If you would like to measure the resistivity accurately

Improper grounding may cause charge build-up and damage the unit

Si wafer (111), 3 " dia x 0.5 mm, 1sp, N type, undoped, resistivity: > 1000ohm-cm - SIUc76D05C1R1000 Aluminum Film Construction MaterialSingle crystal Si Conductivity: N type ( undoped) Resistivity: > 1000 ohm CM Size: 3" diameter x 0. 5 mm Orientation: <111> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater