Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm PbS

Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm PbSSingle crystal Si, (CZ) Conductivity: P type ( B doped) Resistivity: <0. 01 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 5mm Orientation: (111) 4 + 0. 5 degree off Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer

The maximum temperature is 100ºC

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KF-50 Quick Clamp with Rubber O-Ring

and coated battery electrode sheet

MTI-DZF6020-OH EQ-DZF-6020-series

recipe management

19mm (for electrode discs of CR20xx series coin cell cases and CR2325 negative side cases)

which will make the diamond blade cut more efficiently and keep the machine from corroding

600 or 1000ml optional) - BL-SS

Carbon content: 99%

and max loading of 8 Kg per shelf

Typical Properties for Al2O3: