Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm Li1.5Al0.5Ge1.5P3O12

Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm Li1.5Al0.5Ge1.5P3O12Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 0007 0. 002 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

10  pm/V    rT 42=       1920

Optional You may order a pre-formed pouch cell case and other accessories  by click the picture below right

Use anti-rust oil after the operation and store it in a dry place to avoid rusting

Change in Voltage: Upto 5V

controlled application of negative pressure and safe bleeding

of the bottom can: 22mm

BK7 (Schott) - glass substrates

Range4~1×10-5Pa

Water absorption: 2%

Improper use is deemed to be all use for purposes deviating from those mentioned below

Test Reports and Curves for analysis

Lattice constant ( A )