InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished Additive 40KHz - MSK-800W
$948.75
Description
40KHz - MSK-800W
9% pure stranded copper for maximum conductivity
100 pairs of CR2032 button cell cases
Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished Additive 40KHz - MSK-800W2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: two sides polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (2 6)E17 cc @77K Mobility (cm^2 Vs) (@77K): 3. 9E 4 EPD ( cm^2) < 200
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