Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp - ALC050505S1 Presses Please clean the mould via

Please clean the mould via ethanol after the completion of each experiment

and report immediately to MTI within 15 days of delivery

Porosity rate: 7

Heating Plate Dimension                   78 mm OD x 85 mm H   +

Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp - ALC050505S1 Presses Please clean the mould viaFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 5 mm x 5 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with