Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US K For the data of Corning

For the data of Corning 0F 7980HPFS

Only the rubber needle included in the package is allowed to use for adjusting the set point SP1 and SP2

Optional sizes available in 10

one flange

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa100D0525C1US K For the data of CorningThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter + 0. 5 mm x 0. 525 mm Orientation: (100) + 1o Polish: