GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp Mixing Jars Orientation: (111) +/-0

Orientation:                            (111) +/-0

~3 x10-4 @77K

With lid open: 340mm(L) × 300mm(W) × 560mm(H)

dwell temperature and time

GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp Mixing Jars Orientation: (111) +/-0GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate. Specifications: Research Grade , about 90 % useful area Nominal GaN thickness: 0. 5? m 0. 1 ? m Front Surface finish (Ga face): <1nm RMS, As grown Back surface finish: as