Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm - SiPa101D05C1R1US YSZ (Yittrium stabilized ZrO2) Cutting Blade

Cutting Blade

Material: Copper

Grown by a special LEC technique

Easy cell assembling by "thread-in" the bottom contacting plate and top plunger into the PTFE body

Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm - SiPa101D05C1R1US YSZ (Yittrium stabilized ZrO2) Cutting BladeSingle crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5 A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01