GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT)

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT)GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 35 4. 21)x10^8Ohm. cm Mobility: 4360 5640cm^2 V. S EPD: <5000cm^ 2 Primary Flat: EJ(0 1 1) Secondary Flat: EJ(0 11) Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

and Li half-cell testing

and order a coolant circulation system at the related product below

Resistivity:                  >50  Ohms/cm (If you would like to measure the resistivity accurately

Split cover for easy tube replacement

FKM is also suitable for high vacuum applications

CR2032 case and spacer shown in picture is not included

Specifications: (RoHS Compliant

One battery testing control unit could connect up to 10 battery-and-supercapacitor analyzers

Crystal Substrate A-Z

(For 208~240V power supply

5 mm +/- 0

Temperature Controller (Optional)