Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm Hafnium(Hf) Pressing die installation schematic Instruction

Pressing die installation schematic            Instruction

Properties/Crystal

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Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm Hafnium(Hf) Pressing die installation schematic InstructionThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 50 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Un doped Resistivity: >1000 ohm cm Size: 50. 8 diameter + 0. 5 mm x 0. 3 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughnessm, Ra: < 5A(RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer