Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm Thin Film Deposition SrMoO4 Film FTO film

SrMoO4 Film  FTO film

28mm in Nickel Tab with Adhesive Polymer Tape (9

Operating current at 10 A < 8 seconds

Capacity: ~10Ah with LiFePO4 cathode

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm Thin Film Deposition SrMoO4 Film FTO filmGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other