Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm Miscellaneous

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm MiscellaneousGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

Two 1/4 BSPP Male-to-Male Couplers

The fully diamond sintered blade is suitable for low speed cutting ( under 3000 RPM) of oxide single crystals or any brittle crystal

Y:   20 mm +/- 0

MSK-510 Crimper

Hafnium( Hf ) substrate ( Polycrystalline)

Please select the tube size in the options bar

How to choose MTI Crimper

you must use automatic coater as Pic of below- left

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Diameter:    50

Via software

STANDARD PACKAGE: