Si Wafer (100), 2" dia x 0.1 mm, 1SP, P type, B doped, R:5-20 ohm.cm - SIBa50D01C1 LiAlO2 Although PEO does not have

Although PEO does not have a good ionic conductivity (around 10^-4 - 10^-8)

0% Decay constant    1000 ns Expansion coefficient          54 * 10-6/K Radiation length  1

Core Depth(N): 30 mm

the nano-fibers are winded in the form of an aligned nonwoven membrane on a rotating drum

Si Wafer (100), 2" dia x 0.1 mm, 1SP, P type, B doped, R:5-20 ohm.cm - SIBa50D01C1 LiAlO2 Although PEO does not haveSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 5 20 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 1 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner