Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.43mm , 2SP Al2O3

Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.43mm , 2SP Al2O3Features: Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001]( + 0. 3 Deg) with Standard Flat Diameter: 3" + 0. 3mm Thickness: 430um + 25 um Major Flat: A axis[11 20]+ 0. 5o Surface Finish: Front sides: Epi polished Ra<0. 5nm (by AFM) Back side: Epi polished , <0. 5nm(by AFM) TTV: < =15um BOW: <=15um WARP: <=15um Polished surface: Two side epi

2'' (Outside Diameter * Inner Diameter)

m one each side

): 109 - 1011

15" +/- 0

Adhesive (Polyester-polyurethane):  4-5 g/m2                                           (Melting point:  150ºC )

FeCrAl Resistance wire:           Max

015 Lb/in3 (0

ID:     36

Purity:  99

(Do not use this valve for high-pressure tube furnaces)

the glove box can be vacuumed by a mechanical pump up to 0

Particle Size:      5 -10 micron