Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick, Two Dimensional Crystal Melting Point: 1650 oC

Melting Point:                     1650 oC

Pocket Size(mm):     L10

Force on Hydraulic Cylinder (T)

Complete accessories are included (see standard list below)

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick, Two Dimensional Crystal Melting Point: 1650 oCSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for