US$ 4750.00
InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished Cu Material Cubic Boron Nitride
$182.85
Description
Material Cubic Boron Nitride
loops times charge/discharge capacity curve
For CVD and hydrogen furnace
One end is 1/4" BSPP male fitting
InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished Cu Material Cubic Boron Nitride2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 10x10x0. 45 mm + 20 microns Orientation: <111>A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2
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