Si wafer (100), 3 "dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cm Crucibles Features Rigid metallic construction

Features Rigid metallic construction

Surface Polishing:               Both  sides  polished

<100>  YBCO

and drying agent between two layers

Si wafer (100), 3 "dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cm Crucibles Features Rigid metallic constructionSingle crystal Si Conductivity: P type ( B doped) Resistivity: 0. 001 0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter Thickness: 0. 35 + 0. 025 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer