M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control is defined

is defined

It is not intended to specify wafers used in process development or for technology-specific circuit-quality applications

SEMI MF533-0310 (technical revision)

which may be integrated circuit (IC) wafers and devices

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control is definedThis Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon