M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 SEMI E10-0699 (technical revision)

SEMI E10-0699 (technical revision)

1 Ωcm for n-type silicon with minor changes in the measurement procedure

1  The purpose of this Standard is to standardize requirements for nitric acid used in the semiconductor industry and testing procedures to support those standards

The purpose of this Document is to provide guidelines for organosilicate precursors used in Low K CVD processes and to standardize testing procedures to support those requirements

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 SEMI E10-0699 (technical revision)1 Purpose 1. 1 Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi insulating n type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications. 1. 2 The active layers needed for devices are generated either by epitaxy or by ion implantation. The quality of