50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materialsGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materials"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materialsGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materials"> 50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materialsGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materials – digilifeset.online

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Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materials

$137.43

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50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materials">
Description

Applications on various materials

Easy to load and remove tube block

Please consider a 3 in1 sealing machine to make pouch cells

Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately

Ge Wafer (100) Undoped, 2" dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP - GEUa50D05C2R50US GaN Single Crystal Applications on various materialsGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness: RMS or Ra:~ 10 A( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

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