Hypertec MC229G/A-HY memory module 2 GB DDR3 1066 MHz ECC

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Description

Hypertec MC229G/A-HY memory module 2 GB DDR3 1066 MHz ECCHypertec MC229G A HY. Internal memory: 2 GB, Internal memory type: DDR3, Memory clock speed: 1066 MHz, Memory form factor: 240 pin DIMM, ECC

Internal memory: 16 GB

Memory Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Memory form factor 240-pin DIMM ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3 Features Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Memory form factor 240-pin DIMM ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3

2 V Memory ranking 2 ECC No Memory clock speed 2133 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 16 GB Internal memory 16 GB Component for Laptop Memory form factor 260-pin SO-DIMM CAS latency 15 Memory voltage 1

2 V Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for Laptop Memory form factor 260-pin SO-DIMM CAS latency 15 Memory voltage 1

35 V Memory Buffered memory type Registered (buffered) Internal memory 8 GB Memory voltage 1

35 V Memory ranking 4 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3L

Green Other features Capacity 64 GB Frequency band 2

Memory Buffered memory type Registered (buffered) Internal memory 8 GB Memory form factor 240-pin DIMM Memory ranking 2 Internal memory type DDR3 Features Buffered memory type Registered (buffered) Internal memory 8 GB Memory form factor 240-pin DIMM Memory ranking 2 Internal memory type DDR3

Memory Buffered memory type Registered (buffered) Internal memory 8 GB Memory form factor 240-pin DIMM Memory ranking 4 ECC Yes Memory clock speed 1066 MHz Internal memory type DDR3 Features Buffered memory type Registered (buffered) Internal memory 8 GB Memory form factor 240-pin DIMM Memory ranking 4 ECC Yes Memory clock speed 1066 MHz Internal memory type DDR3

The RDIMM configuration along with 3DS TSV DRAM packages exhibits performance benefits and lower power consumption over alternative high density solutions to ultimately provide the lowest TCO for data centers

Memory Buffered memory type Unregistered (unbuffered) Internal memory 8 GB Memory form factor 288-pin DIMM ECC No Memory clock speed 2400 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Internal memory 8 GB Memory form factor 288-pin DIMM ECC No Memory clock speed 2400 MHz Internal memory type DDR4

Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 2 GB Internal memory 2 GB Memory form factor 240-pin DIMM Memory ranking 2 ECC Yes Memory clock speed 1333 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 2 GB Internal memory 2 GB Memory form factor 240-pin DIMM Memory ranking 2 ECC Yes Memory clock speed 1333 MHz Internal memory type DDR3

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