Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm Max. number of Channel 8

Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm Max. number of Channel 8Specifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) + 0. 7 degree Surface finish (RMS or Ra) : < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

One pack of 50160 accessories

Laser Mark: none

35 mm thickness and 0

Min Air Set

Diameter: 3" +/- 0

5% Specific Capacity 110 mAh/g Coating Double sided Double Side Density 430-440 g/m^2 SDS  Material Safety Data Sheet Application Note Viddeo:

Pumping of condensing vapors

The case and spring shown in the picture are not included

Mohn hardness

Temperature Resistance: 300 oC

biotechnology and AFM applications and is also suitable of an opaque microscopy support

especially for cutting ferrous metal samples