P01400 - SEMI P14 - 黒鉛炉原子吸光分光法によるポジティブフォトレジスト中の錫の測定 StdPbc-0421

P01400 - SEMI P14 - 黒鉛炉原子吸光分光法によるポジティブフォトレジスト中の錫の測定 StdPbc-0421NOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. 1:

本スタンダードは，global Silicon Wafer Committeeで技術的に承認されている。現版は2005年11月29日，global Audits and Reviews Subcommitteeにて発行が承認された。2006年2月にwww

SEMI M66-0706 (first published)

16-1106 (Withdrawn 0524)

this document identifies a road map for using published standards that comprehend all the procedures involved in tool accommodation from procurement through acceptance

The specification described here covers physical

This reporting can also be applied to equipment with process modules

Nn grown on monocrystalline wafers of GaAs or InP (other substrates may be considered where appropriate documents exist to describe the specification of the substrate)

This format is designed to be both hardware- and software-independent

Standardized scan patterns for both local and full-area surface characterization

1 — Specification for SECS-II Protocol for Predictive Carrier Logistics

due to embrittlement of PET) and external (e

SEMI F57-0622 (technical revision)