LaAlO3,(110) 10x10x0.5 mm substrate , 2 side Epi polished - LAOe101005S2 Boron-Nitride on Silicon 203 at 632

203   at 632

Melting Point 1375 ± 5 Max Working Temperature(Tmax) 1100 Thermal Weight Loss (40 ~ 1180 0

Provides larger discharging capability and longer service life for Li-Ion batteries

40" x 30" x 28"

LaAlO3,(110) 10x10x0.5 mm substrate , 2 side Epi polished - LAOe101005S2 Boron-Nitride on Silicon 203 at 632Substrate Specifcations: Wafer Size: 10 x 10 x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (110) + 0. 5 Deg Polishing: Two sides CMP polished with free sub surface damaged. Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which is normal nature . For detailed physical